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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3405
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3405 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3405 2SK3405-ZK 2SK3405-ZJ PACKAGE TO-220AB TO-263(MP-25ZK) TO-263(MP-25ZJ)
FEATURES
* 4.5-V drive available * Low on-state resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 24 A) * Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 16 V, VGS = 10 V) * Built-in gate protection diode * Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25C )
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 20 48 192 1.5 50 150 -55 to +150
V V A A W W C C
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Note PW 10 s, Duty Cycle 1%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14639EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark # shows major revised points.
(c)
1999, 2000
2SK3405
ELECTRICAL CHARACTERISTICS(TA = 25C)
CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 48 A IF = 48 A, VGS = 0 V IF = 48 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 24 A VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 24 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V , ID = 24 A VGS(on) = 10 V RG = 10 1.5 12.5 6.5 9.9 1800 770 400 21 13 64 25 34 6.6 11 1.0 38 29 9.0 14.0 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD VDS
90 %
VGS VGS
Wave Form
IG = 2 mA
90 %
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
VDS
Wave Form
0
10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet D14639EJ2V0DS
2SK3405
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 VGS =10 V
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
7.0 V
ID - Drain Current - A
150
100
100
4.5 V
10 Tch = -50C -25C 25C 75C 150C
50 Pulsed 0 0 1 2 3
1
0.1
1
2
3
4
5
6
VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0.5 0 -50
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 10 V ID = 1 mA
10 Tch = 150C 75C 25C -25C -50C
1
0
50
100
150
0.1 0.01
0.1
1
10
100
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-state Resistance - m
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed
ID = 48 A 24 A 10 A
20
10
10
VGS = 10 V
7.0 V 4.5 V
5
0
0
5
10
15
20
0 0.1
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D14639EJ2V0DS
3
2SK3405
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed VGS = 10 V 100 4.5 V 10 1 0V
16 14 12 10 8 6 4 2 0 -50 0 50 100 150 VGS = 4.5 V 7.0 V 10 V
0.1
0.01 0
0.5
1
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
100 tf td(on) 10
td(off)
Ciss 1000 Coss Crss
tr
100 0.1
1
10
100
1 0.1
1
10
VDD = 10 V VGS = 10 V RG = 10 100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 18 ID = 48 A 15 12 9 VGS 6 3 VDS 0 0 10 20 30 40 0 4 VDD = 16 V 10 V 4V 12
VGS - Gate to Source Voltage - V
100
8
10
1 0.1
1
10
100
ISD - Diode Forward Current - A
QG - Gate Charge - nC
4
Data Sheet D14639EJ2V0DS
2SK3405
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40
60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
20 0 0 20 40 60 80
100
120 140 160
Tch - Channel Temperature - C
TC - Case Temperature - C
#
1000
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
ID - Drain Current - A
PW
100
d ite ) im 0 V 1 )L on = S( S ID(DC) RD VG (@
Po we r
10
Di ss ipa tio n
10 0 s 30 0 1m s 3m s 10 s m s
=1 0 s
Lim ite d
DC
1 0.1
TC = 25C Single Pulse 1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10 Rth(ch-C) = 2.5C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - sec
Data Sheet D14639EJ2V0DS
5
2SK3405
PACKAGE DRAWINGS (Unit: mm)
1)TO-220AB (MP-25)
3.00.3
10.6 MAX. 10.0 4.8 MAX.
2)TO-263 (MP-25ZK)
10.00.2 No plating 0.4 8.4 TYP. 4
1.350.3
4.450.2 1.30.2
3.60.2
5.9 MIN.
1.30.2
8.0 TYP.
15.5 MAX.
9.150.2
15.250.5
0.025 to 0.25
4 123
6.0 MAX.
12.7 MIN.
1.30.2
0.5
0.70.15 2.54
0.2 8o
0 to
0.25
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
1
2
3 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
(10) 4
4.8 MAX. 1.30.2
Drain
1.00.5
8.50.2
Gate
Body Diode
5.70.4
1.40.2 0.70.2 2.54 TYP. 1 2
(
R 0.5
)
3 2.54 TYP.
(0
.8R
)
0.50.2
Gate Protection Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D14639EJ2V0DS
2.450.25
2SK3405
[MEMO]
Data Sheet D14639EJ2V0DS
7
2SK3405
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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